Technical Lead Epitaxy

Department: R&D

Employment Type: Full Time

Location: Plymouth

Description

Key Responsibilities

• Develop and optimise III-AsP epitaxial growth processes using MOCVD for advanced device structures, ensuring high crystal quality, low defect density, and scalable manufacturability. 
• Define suitable procedures/techniques for material characterisation.
• Design, plan, and execute Design of Experiments (DOE) to systematically optimise MOCVD growth parameters. 
• Analyse epitaxial characterisation data and identify key process drivers influencing crystal quality, interface abruptness, and electrical performance. 
• Collaborating with R&D, you will take full technical ownership of MOCVD process development, from early-stage epitaxial structure design through qualification and transfer to high-volume manufacturing. 
• Define and establish robust MOCVD process windows, to ensure stable and repeatable epitaxial growth. 
•  Provide hands-on support when required for MOCVD reactor operation, including process setup, calibration, troubleshooting, and optimisation of growth conditions. 
• There will be a team of experienced Epitaxy Engineers but as one of the technical experts you will be the go to person to advise and support. 
•  Provide technical leadership within the MOCVD epitaxy module, supporting engineers in best practices for growth, reactor operation, and process control. 
• Mentor and develop junior engineers. 
• Document and update best practice procedure to be used for troubleshooting and training junior engineers. 
• Research on current trends in the industry and academia concerning microLED technology, AR/VR, visual light communication and optical computing from publications, conference proceedings and patents. 
• Contribute to technology roadmap development. 
• Strong collaboration across device, integration, and manufacturing teams. 
  
  

Skills, Knowledge and Expertise

• Proven experience involving AsP epitaxy for photonics including LEDs and uLEDs, edge emitting lasers, VCSELs, preferably on GaAs, preferably in the visible range. Experience in III-V on Si/Ge and Si photonics is also of interest.
• Experience scaling R&D processes into manufacturing.
• Previous and direct experience with relevant epitaxy tools.
• Highly hands-on and experimental mindset.
• Strong problem-solving and troubleshooting ability.
• Comfortable working in lab and fab environments.
• Ability to translate device requirements into epitaxial structures.
• Ability to organise data in order to support the team to arrive at solutions efficiently, by focusing on appropriate issues.
• Be committed and contribute towards a continuous improvement operating environment.
• Proactive attitude and ability to work independently and task ownership.
  
  

Benefits

• Pension scheme 
• Private medical & dental insurance 
• 28 days’ holiday + bank holidays 
• Free onsite meals 
• Onsite gym 
• Relocation support 
• Visa support available